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Toshiba Research and Development Center | 論文
- Solid-Phase Lateral Epitaxial Growth onto Adjacent SiO_2 Film from Amorphous Silicon Deposited on Single-Crystal Silicon Substrate
- MRI (Magnetic Resonance Imager)
- Electron Activation Energy in Si-Doped AlGaAs Grown by MBE
- Effects of the Growth Conditions on Deep Level Concentration in MOCVD GaAs
- Piezoelectric Materials for Low Hysteresis Actuators : P: Pyroelectrics
- Automatic Angular Distribution Measuring System in Rutherford Backscattering Analysis
- A metal halide lamp with ultra-high-color rendering property
- Preparation and Magnetic Properties of a New Selenide Spinel Cu_In_Cr_2Se_4
- Scattering Matrix Theory of Resonant Tunneling
- Nuclear Magnetic Resonances of Mo^, Mo^ and Fe^ in Ba_2(FeMo)O_6, Sr_2(FeMo)O_6 and Ca_2(FeMo)O_6
- DLTS Study of RIE-Induced Deep Levels in Si Using p^+n Diode Arrays
- Chemical reaction phenomena in a Sc-Na halide lamp
- Hysteresis Curve Variations of MOS Capacitors Passivated by Ba(PO_3)_2-Al(PO_3)_3-B_2O_3 Glasses
- A New Field Isolation Technology for High density MOS LSI : A-5: DEVICE TECHNOLOGY (2)
- Fabrication of New Piezoelectric Ceramic and Its Surface Wave Velocity
- Fabrication of Temperature Stabilized Piezoelectric Ceramic for Surface Wave Applications
- Piezoelectric Properties of Ferroelectric K_3Li_2(Ta_xNb_)_5O_ Single Crystals
- Sulfur Kβ X-Ray Emission Spectra of Co(As_xS_)_2 for 0≤x≤- 0.5
- Temperature Dependence of Giant Magnetoresistance in Co/Cu Superlattices
- IGTC-95 PERFORMANCE OF THERMAL BARRIER COATING FOR GAS TURBINE AIRFOIL IN ENGINE TEST(Session C-4 Material and Manufacturing I)