Electron Activation Energy in Si-Doped AlGaAs Grown by MBE

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概要

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• The electron activation energy in Si-doped AlGaAs is calculated assuming the coexistence of a shallow donor center and a DX center, where the concentration of two centers was evaluated, from the previous DLTS study. The result suggests that the strange variation in donor ionization energy with the AlAs mole fraction observed in the Hall measurement is due to changes in the ratio of concentrations of the two donor centers.

• 社団法人応用物理学会の論文
• 1984-09-20

著者

• Watanabe Miyoko

  Toshiba R & D Center

• MAEDA Hajime

  Toshiba Research and Development Center

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