Effects of the Growth Conditions on Deep Level Concentration in MOCVD GaAs
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概要
- 論文の詳細を見る
Growth parameter dependence of the concentration of a dominant deep level (E_c -0.84eV) in undoped and S-doped MOCVD grown GaAs has been studied by DLTS. Considerable attention has been raid to the analysis of DLTS signal in order to obtain the true concentration from the experimental data. It has been found that the concentration of 0.84eV level is proportional to ([AsH_3]/[TMG])^1/4. It increases with growth temperature, and decreases with increase in the concentration of doped S. The mole ratio dependence of the 0.84eV level concentration suggests that the dominant deep level in GaAs is closely related to a Ga vacancy.
- 社団法人応用物理学会の論文
- 1981-06-05
著者
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Zohta Yasuhito
Toshiba Research And Development Center Toshiba Corp.
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Zohta Yasuhito
Toshiba Research And Development Center
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TANAKA Atsushi
Toshiba Electronics Equipment Division
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Watanabe Miyoko
Toshiba Research And Development Center Toshiba Corp.
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Watanabe Miyoko
Toshiba R & D Center
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NAKANISHI Takatoshi
Toshiba Electronics Equipment Division, Toshiba Corp.
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Tanaka Atsushi
Toshiba Electronics Equipment Division Toshiba Corp.
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Nakanishi Takatoshi
Toshiba Electronics Equipment Division Toshiba Corp.
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