On the Definition of Sequential Tunneling in a Double-Barrier Resonant Tunneling Structure

スポンサーリンク

概要

• 論文の詳細を見る

• It is pointed out that sequential tunneling has, until now, been defined in two ways in the literature, and this has led to some confusion. It is shown that sequential tunneling defined as a two-step process is an alternative description of resonant tunneling, but not an alternative mechanism for it.

• 社団法人応用物理学会の論文
• 1993-02-01

著者

• Zohta Y

  Tokyo Univ. Technol. Tokyo Jpn

• Zohta Yasuhito

  Toshiba Research And Development Center

関連論文

• AsH_3 to Ga(CH_3)_3 Mole Ratio Dependence of Dominant Deep Levels in MOCVD GaAs
• Shallow Donor State Produced by Proton Bombardment of Silicon
• Donor Levels in Si-Doped AlGaAs Grown by MBE
• Effects of the Growth Conditions on Deep Level Concentration in MOCVD GaAs
• Scattering Matrix Theory of Resonant Tunneling
• DLTS Study of RIE-Induced Deep Levels in Si Using p^+n Diode Arrays
• On the Definition of Sequential Tunneling in a Double-Barrier Resonant Tunneling Structure
• Influence of Transmission Resonance on Current-Voltage Characteristics of Semiconductor Diodes including a Quantum Well
• Analysis of Thermionic Emission Current over the Al_xGa_AS Barrier in a GaAs/Al_xGa_AS/Gas (x>0.45) Structure : Semiconductors and Semiconductor Devices

スポンサーリンク