Influence of Transmission Resonance on Current-Voltage Characteristics of Semiconductor Diodes including a Quantum Well
スポンサーリンク
概要
- 論文の詳細を見る
In small semiconductor devices, electrons show a wave property. Electrons coming to a quantum well are partly reflected and partly transmitted at the well. The electron motion in semiconductor diodes including the quantum well is studied. Under conditions where the energy of the electrons coming to the quantum well can be controlled by an external field, current-voltage characteristics of the diodes are calculated. Preliminary results show anomalous current-voltage characteristics and the possibility of a negative resistance due to transmission resonance.
- 社団法人応用物理学会の論文
- 1984-08-20
著者
関連論文
- AsH_3 to Ga(CH_3)_3 Mole Ratio Dependence of Dominant Deep Levels in MOCVD GaAs
- Shallow Donor State Produced by Proton Bombardment of Silicon
- Donor Levels in Si-Doped AlGaAs Grown by MBE
- Effects of the Growth Conditions on Deep Level Concentration in MOCVD GaAs
- Scattering Matrix Theory of Resonant Tunneling
- DLTS Study of RIE-Induced Deep Levels in Si Using p^+n Diode Arrays
- On the Definition of Sequential Tunneling in a Double-Barrier Resonant Tunneling Structure
- Influence of Transmission Resonance on Current-Voltage Characteristics of Semiconductor Diodes including a Quantum Well
- Analysis of Thermionic Emission Current over the Al_xGa_AS Barrier in a GaAs/Al_xGa_AS/Gas (x>0.45) Structure : Semiconductors and Semiconductor Devices