Zohta Yasuhito | Toshiba Research And Development Center
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概要
関連著者
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Zohta Yasuhito
Toshiba Research And Development Center
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Zohta Yasuhito
Toshiba Research And Development Center Toshiba Corp.
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TANAKA Atsushi
Toshiba Electronics Equipment Division
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Watanabe Miyoko
Toshiba R & D Center
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Oku Watanabe
Toshiba Research And Development Center
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Morizuka Kouhei
Toshiba Research and Development Center
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Mashita Masao
Toshiba R & D Center
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Mashita Masao
Toshiba Research And Development Center
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Ohmura Yamichi
Toshiba Research And Development Center Tokyo Shibaura (toshiba) Electric Co. Ltd.
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Ohmura Yamichi
Toshiba R And D Center Tokyo Shibaura Electric Co. Ltd.
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Ashizawa Yasuo
Toshiba Research And Development Center
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Ashizawa Yasuo
Toshiba R & D Center
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Udagawa Takashi
Toshiba Electronics Equipment Division
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Zohta Y
Tokyo Univ. Technol. Tokyo Jpn
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Zohta Yasuhito
Toshiba Research And Development Center Toshiba Corporation
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Zohta Yasuhito
Toshiba Research And Development Centor
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Zohta Yasuhito
Toshiba Research And Development Center Tokyo Shibaura (toshiba) Electric Co. Ltd.
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Oku WATANABE
Toshiba Research and Development Centor
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NAKANISHI Takatosi
Toshiba Electronics Equipment Division
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KANAZAWA Mamoru
Toshiba Research and Development Center, Tokyo Shibaura (TOSHIBA) Electric Co., Ltd.
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WATANABE Miyoko
Toshiba R&D Center
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Watanabe Miyoko
Toshiba Research And Development Center Toshiba Corp.
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Watanabe Miyoko
Toshiba Research And Development Center
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NAKANISHI Takatoshi
Toshiba Electronics Equipment Division, Toshiba Corp.
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Kanzaki Koichi
Toshiba Semiconductor Device Engineering Laboratory
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Kanzaki Koichi
Toshiba Research And Development Center Tokyo Shibaura Electric Co. Lid.
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TAGUCHI Minoru
Toshiba Semiconductor Division
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Kanazawa Mamoru
Toshiba Research And Development Center Tokyo Shibaura (toshiba) Electric Co. Ltd.
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Nakanishi Takatosi
Toshiba Electronics Equipment Division:(present Address)toshiba Research And Development Center
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Tanaka Atsushi
Toshiba Electronics Equipment Division Toshiba Corp.
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Nakanishi Takatoshi
Toshiba Electronics Equipment Division Toshiba Corp.
著作論文
- AsH_3 to Ga(CH_3)_3 Mole Ratio Dependence of Dominant Deep Levels in MOCVD GaAs
- Shallow Donor State Produced by Proton Bombardment of Silicon
- Donor Levels in Si-Doped AlGaAs Grown by MBE
- Effects of the Growth Conditions on Deep Level Concentration in MOCVD GaAs
- Scattering Matrix Theory of Resonant Tunneling
- DLTS Study of RIE-Induced Deep Levels in Si Using p^+n Diode Arrays
- On the Definition of Sequential Tunneling in a Double-Barrier Resonant Tunneling Structure
- Influence of Transmission Resonance on Current-Voltage Characteristics of Semiconductor Diodes including a Quantum Well
- Analysis of Thermionic Emission Current over the Al_xGa_AS Barrier in a GaAs/Al_xGa_AS/Gas (x>0.45) Structure : Semiconductors and Semiconductor Devices