DLTS Study of RIE-Induced Deep Levels in Si Using p^+n Diode Arrays

概要

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Deep levels in Si induced by reactive ion etching (RIE) of SiO_2 film have been studied by DLTS. In order to detect the RIE-induced damage existing near the surface region, special device structures consisting of p^+n diode arrays are used. It is found that the dominant deep levels produced by RIE are four hole traps. One level at E_v+0.40 eV exhibits the Poole-Frenkel effect, from which it is identified as an acceptor. Another level at E_v+0.46 eV is deduced to be an interstitial iron level from the emission rate. There is a strong decrease in the deep level concentrations upon annealing above 500℃. However, the deep levels do not completely disappear upon annealing at high temperatures. The deep level concentrations correlate well with the current-voltage characteristics of the devices.
社団法人応用物理学会の論文
1983-02-20