Generation-Recombination Noise of p-InSb

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概要

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• The noise power spectrum of high purity p-InSb has been measured at 77K. Generation-recombination (g-r) noise was found dominant in the 1-10 kHz freqttency range. The measured values of g-r noise power are one or two orders of magnitude smaller than the values calculated by the simple noise theory of the extrinsic semiconductor due to partial deep level ionization. The g-r noise theory, taking the complete shallow acceptor levels ionizal:ion and partial deep level ionization into account, closely predicts the actually obtained expem'imental values.

• 社団法人応用物理学会の論文
• 1976-06-05

著者

• KANZAKI Kiyoshi

  Department of Applied Physics, Faculty of Engineering, University of Tokyo

• MIYAO Wataru

  Toshiba Research and Development Center, Tokyo Shibaura Electric Co., Lid.

• Miyao Wataru

  Toshiba Research And Development Center Tokyo Shibaura Electric Co. Lid.

• Kanzaki Koichi

  Toshiba Research And Development Center Tokyo Shibaura Electric Co. Lid.

関連論文

• Switching of Photon Helicities in the Hard X-Ray Region with a Perfect Crystal Phase Retarder
• Properties of InSb Photodiodes Fabricated by Liquid Phase Epitaxy
• DLTS Study of RIE-Induced Deep Levels in Si Using p^+n Diode Arrays
• Generation-Recombination Noise of p-InSb

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