Properties of InSb Photodiodes Fabricated by Liquid Phase Epitaxy

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概要

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• High detectivity InSb photodiodes have been developed by using the liquid phase epitaxy technique. They have n on p structure. Infrared radiation absorption in the Te doped n layer is quite small, due to the Burstein-Moss effect. The quantum efficiency of the photodiode is limited only by diffusion length L_n of minority carriers in the p region. Values obtained were from 0.2 to 0.3. The zero bias resistance of 2 mmφ diodes was from 100 to 200 kΩ. Specific detectivity D^*_γ(γ=5μm, frequency 1 kHz) was from 5×10^<10> to 1×10^<11> cmHz^<1/2>/W.

• 社団法人応用物理学会の論文
• 1976-07-05

著者

• Yahata Akihiro

  Toshiba Research And Development Center Tokyo Shibaura Electric Co. Lid.

• Yahata Akihiro

  Toshiba Corporation

• KANZAKI Koichi

  Toshiba Research and Development Center, Tokyo Shibaura Electric Co., Lid.

• MIYAO Wataru

  Toshiba Research and Development Center, Tokyo Shibaura Electric Co., Lid.

• Miyao Wataru

  Toshiba Research And Development Center Tokyo Shibaura Electric Co. Lid.

• Kanzaki Koichi

  Toshiba Research And Development Center Tokyo Shibaura Electric Co. Lid.

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• Properties of InSb Photodiodes Fabricated by Liquid Phase Epitaxy
• DLTS Study of RIE-Induced Deep Levels in Si Using p^+n Diode Arrays
• Generation-Recombination Noise of p-InSb

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