4.5kV Injection Enhanced Gate Transistor:Experimental Verification of the Electrical Characteristics

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概要

• 論文の詳細を見る
• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 1997-06-01

著者

• Inoue Tomoki

  Toshiba Corporation

• Yahata Akihiro

  Toshiba Research And Development Center Toshiba Corp.

• Yahata Akihiro

  Toshiba Corporation

• KITAGAWA Mitsuhiko

  Toshiba Corporation

• HASEGAWA Shigeru

  Toshiba Corporation

• OHASHI Hiromichi

  Toshiba Corporation

関連論文

• 4.5kV Injection Enhanced Gate Transistor:Experimental Verification of the Electrical Characteristics
• Growth and Properties of GaAs_xP_ Liquid-Phase Epitaxial Layers Grown on GaP
• Desigrn Criterion and Operation Mechanism for 4.5 kV Injection Enhanced Gate Transistor
• Properties of InSb Photodiodes Fabricated by Liquid Phase Epitaxy
• Study of 4.5kV MOS-Power Device with Injection Enhanced Trench Gate Structure
• Study of 4.5 kV MOS-Power Device with Injection-Enhanced Trench Gate Structure
• High-Voltage Emitter Short Diode (ESD)

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