High-Voltage Emitter Short Diode (ESD)

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概要

• 論文の詳細を見る

• We report the effects of emitter short structures, ESD(a) and ESD(b), as well as the effect of a very shallow emitter, on the reverse recovery characteristics for 4kV high-voltage diodes. It was found that a diode with a shallow p-emitter and emitter short structures attains half the reverse recovery current I_<rr>, compared to conventional punch-through p-i-n diodes. ESD has a further advantage in that the leakage current is as low as that of conventional p-n junction diodes, even at 125℃. ESD structures with a fine n^+ and p^+ short structure attain no parasitic effect, even at a current density of 100 A/cm^2 and di/dt of - 1000 A/μs.

• 社団法人応用物理学会の論文
• 1996-12-15

著者

• KITAGAWA Mitsuhiko

  Toshiba Corporation

• NAKAGAWA Akio

  Toshiba Corporation

• MATSUSHITA Ken-ichi

  Toshiba Corporation

関連論文

• 4.5kV Injection Enhanced Gate Transistor:Experimental Verification of the Electrical Characteristics
• Desigrn Criterion and Operation Mechanism for 4.5 kV Injection Enhanced Gate Transistor
• Study of 4.5kV MOS-Power Device with Injection Enhanced Trench Gate Structure
• Study of 4.5 kV MOS-Power Device with Injection-Enhanced Trench Gate Structure
• High-Voltage Emitter Short Diode (ESD)

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