Study of 4.5 kV MOS-Power Device with Injection-Enhanced Trench Gate Structure

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概要

• 論文の詳細を見る

• We propose two new MOS-power device structures, which realize lower on-state voltage than previously proposed injection-enhanced gate transistors (IEGTs). One is an improved IEGT (or IEGN), and the other is a MOS-controlled diode (or IEGD). Using 2-D numerical simulations, it has been confirmed that the IEGN and the IEGD realize a lower on-state voltage drop than the conventional IEGT, retaining MOS gate drivability. This means that the injection-enhanced gate structure improves the effective electron injection efficiency not only for transistor structures, but also for devices with a low-injection efficiency emitter. It has also been confirmed that the 4.5kV IEGN and IEGD can operate under the same circuit conditions as a 4.5kV GTO-thyristor.

• 社団法人応用物理学会の論文
• 1997-03-30

著者

• KITAGAWA Mitsuhiko

  Toshiba Corporation

• NAKAGAWA Akio

  Toshiba Corporation

関連論文

• 4.5kV Injection Enhanced Gate Transistor:Experimental Verification of the Electrical Characteristics
• Desigrn Criterion and Operation Mechanism for 4.5 kV Injection Enhanced Gate Transistor
• Study of 4.5kV MOS-Power Device with Injection Enhanced Trench Gate Structure
• Study of 4.5 kV MOS-Power Device with Injection-Enhanced Trench Gate Structure
• High-Voltage Emitter Short Diode (ESD)

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