Study of 4.5kV MOS-Power Device with Injection Enhanced Trench Gate Structure

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概要

• 論文の詳細を見る
• 1996-08-26

著者

• KITAGAWA Mitsuhiko

  Toshiba Corporation

• NAKAGAWA Akio

  Toshiba Corporation

関連論文

• 4.5kV Injection Enhanced Gate Transistor:Experimental Verification of the Electrical Characteristics
• Desigrn Criterion and Operation Mechanism for 4.5 kV Injection Enhanced Gate Transistor
• Study of 4.5kV MOS-Power Device with Injection Enhanced Trench Gate Structure
• Study of 4.5 kV MOS-Power Device with Injection-Enhanced Trench Gate Structure
• High-Voltage Emitter Short Diode (ESD)

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