Analysis of Thermionic Emission Current over the Al_xGa_<l-x>AS Barrier in a GaAs/Al_xGa_<l-x>AS/Gas (x>0.45) Structure : Semiconductors and Semiconductor Devices

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概要

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• Thermionic emission (TE) current over the Al_xGa_<l-x>AS barrier in a GaAs/Al_xGa_<l-x>AS/GaAs (x>0.45) structure has been analyzed taking into account the conduction band structures of GaAs and Al_xGa_<l-x>AS. Assumption of a noninteracting electron model leads to the conclusion that the L valley governs the TE current. This is true for x〜0.45, but contradicts recent experiments when x approaches 1. The model has been modified to include the Γ→X→Γ current which arises from the mixing between Γ and X wave functions at heterojunction interfaces. On the basis of the modified model, the competition between the L current and the Γ→X→Γ current is discussed.

• 社団法人応用物理学会の論文
• 1988-05-20

著者

• Zohta Yasuhito

  Toshiba Research And Development Center

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• Analysis of Thermionic Emission Current over the Al_xGa_AS Barrier in a GaAs/Al_xGa_AS/Gas (x>0.45) Structure : Semiconductors and Semiconductor Devices

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