Growth Condition Independence Observed for DX Centerin Si-doped AlGaAs Grown by Molecular Beam Epitaxy

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概要

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• Growth condition dependence of donor levels in Si-doped Al_<0.3>Ga_<0.7>As grown by molecular beam epitaxy has been studied by DLTS, C-V and low temperature (4.2 K) photoluminescence measurements. Concentration ratio of shallow donor to total donor is independent of growth temperature and group V/III flux ratio. This suggests that DX center is dominated only by AlAs mole fraction.

• 社団法人応用物理学会の論文
• 1985-11-20

著者

• Ashizawa Yasuo

  Toshiba R & D Center

• Watanabe Miyoko

  Toshiba R & D Center

関連論文

• Determination of Atomic Displacement Modulation in Multi-Layer Structure by X-Ray Diffraction
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• Donor Levels in Si-Doped AlGaAs Grown by MBE
• Growth Condition Independence Observed for DX Centerin Si-doped AlGaAs Grown by Molecular Beam Epitaxy
• Rhenium Tips for Scanning Tunneling Microscopy in Air
• Electron Activation Energy in Si-Doped AlGaAs Grown by MBE
• Effects of the Growth Conditions on Deep Level Concentration in MOCVD GaAs
• Rhenium Tips for Stable Scanning Tunneling Microscopy

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