Note on Limitations in MOS LSI's from a Design Viewpoint : E-2: PHYSICAL AND TECHNOLOGICAL LIMITS OF HIGH-DENSITY INTERGRATION

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文

著者

• Hara Hisashi

  Toshiba Research And Development Center

• Hara Hisashi

  Toshiba Corporation

関連論文

• A New Instability in MOS Transistor Caused by Hot Electron and Hole Injection from Drain Avalanche Plasma into Gate Oxide
• Note on Limitations in MOS LSI's from a Design Viewpoint : E-2: PHYSICAL AND TECHNOLOGICAL LIMITS OF HIGH-DENSITY INTERGRATION
• Special Issue on SOI Devices and Their Process Technologies

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