A New Instability in MOS Transistor Caused by Hot Electron and Hole Injection from Drain Avalanche Plasma into Gate Oxide
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1970-09-05
著者
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Okamoto Yoshihiko
Semiconductor Technology Development Division Hitachi Ltd.
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Okamoto Yoshihiko
Semiconductor Device Engineering Department Tokyo Shibaura Electric Co. Ltd.
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HARA Hisashi
Toshiba Research and Development Center, Tokyo Shibaura Electric Co., Ltd.
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OHNUMA Hiroie
Semiconductor Device Engineering Department, Tokyo Shibaura Electric Co., Ltd.
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Hara Hisashi
Toshiba Research And Development Center Tokyo Shibaura Electric Co. Ltd.
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Hara Hisashi
Toshiba Corporation
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Ohnuma Hiroie
Semiconductor Device Engineering Department Tokyo Shibaura Electric Co. Ltd.
関連論文
- A New Instability in MOS Transistor Caused by Hot Electron and Hole Injection from Drain Avalanche Plasma into Gate Oxide
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- Note on Limitations in MOS LSI's from a Design Viewpoint : E-2: PHYSICAL AND TECHNOLOGICAL LIMITS OF HIGH-DENSITY INTERGRATION
- Special Issue on SOI Devices and Their Process Technologies