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Toshiba Research and Development Center | 論文
- Reactive Ion Beam Etching of SiO_2 and Poly-Si Employing C_2F_6, SiF_4 and BF_3 Gases
- Si Etch Rate and Etch Yield with Ar^+/Cl_2 System
- AsH_3 to Ga(CH_3)_3 Mole Ratio Dependence of Dominant Deep Levels in MOCVD GaAs
- Experimental Approach for LVV Auger Spectra of Sulfur in Some Sulfate Salts
- GaP Green Light-Emitting Diodes with p-n-p-n Structure
- 7) Performance Inprovement Study for TFDLCD
- Statistical analysis of discharge lamp starting characteristics
- Numerical Studies of Localization in Structurally Disordered Systems
- Green and Red Electroluminescences from Diffused Gallium Phosphide p-n Junctions
- Effect of Heat Treatment on Gallium Arsenide Crystals : III. Electrical Properties of Thermally Converted p-Type Crystals
- Effect of Heat Treatment on Gallium Arsenide Crystals : II. Properties of Crystals Heat-Treated in Chalcogen Vapor
- Kinetics of Zn-O Complex Formation in GaP Crystal
- Effect of Heat Treatment on Gallium Arsenide Crystals. : I. Thermal Conversion in Excess Arsenic Vapor
- Kinetics of the Vapor Growth of II-VI Compound Crystals. II. : Zinc Selenide
- Anomalous Capacitance in Gallium Phosphide Electroluminescent p-n Junctions
- Characterization of Computer Controlled Gap Single Crystals : C-2: III-V CRYSTALS/JOSEPHSON JUNCTION
- Determination of Atomic Displacement Modulation in Multi-Layer Structure by X-Ray Diffraction
- Investigation on Auger Line Shapes of Sulfur in Different Chemical Environments
- Sulfur Kβ X-Ray Emission Bands and Valence-Band Structures of Transition-Metal Disulfides
- Kβ Emission and K Absorption Spectra of Sulfur in MnS