Numerical Analysis of Leakage Field Modulation for a Novel Direct Overwrite Medium

概要

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The numerical calculation of the leakage field in a novel laser-power modulation direct overwrite medium has been carried out. The medium had four functional layers: initializing layer, biasing layer, thermal isolating layer and storage layer. The leakage field applied to the storage layer was changed by the laser power. The degree of leakage field change and overwritable domain width, where the direction of an effective field applied to the storage layer could be modulated, were obtained as the figures of merit for overwriting performance. Si-N and Zr-O films were chosen as the thermal isolating layer in order to change the thermal response in the storage layer and the biasing layer. It has been found that the medium with a Si-N thermal isolating layer is suitable for overwriting and that leakage field modulation over 120 Oe was available within a domain width of 0.7 μm.
社団法人応用物理学会の論文
1992-02-28