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Taiwan Semiconductor Manufacturing Company | 論文
- Narrow Width and Length Dependence of SiGe and Sallow-Trench-Isolation Stress Induced Defects in 45 nm p-Type Metal–Oxide–Semiconductor Field-Effect Transistors with Strained SiGe Source/Drain
- Annealing Effect on Boron High-Energy-Ion-Implantation-Induced Defects in Si
- Low-Frequency Noise Properties of SiGe Heterojunction Bipolar Transistors
- Hot-Carrier-Induced Degradation on 0.1 μm Partially Depleted Silicon-On-Insulator Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor
- An Investigation on Hot-Carrier Reliability and Degradation Index in Lateral Diffused Metal–Oxide–Semiconductor Field-Effect Transistors
- Physical and Barrier Properties of Plasma-Enhanced Chemical Vapor Deposited $\alpha$-SiC:H Films from Trimethylsilane and Tetramethylsilane
- Physical and Barrier Properties of Plasma-Enhanced Chemical Vapor Deposited $\alpha$-SiCN:H Films with Different Hydrogen Contents
- Investigation of Inversion Capacitance–Voltage Reconstruction for Metal Oxide Semiconductor Field Effect Transistors with Leaky Dielectrics using BSIM4/SPICE and Intrinsic Input Resistance Model
- Systematical Study of Reliability Issues in Plasma-Nitrided and Thermally Nitrided Oxides for Advanced Dual-Gate Oxide p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
- Fully Analytical Modeling of Cu Interconnects up to 110 GHz
- Investigation of Hot-Carrier-Induced Degradation Mechanisms in p-Type High-Voltage Drain Extended Metal–Oxide–Semiconductor Transistors
- Effect of Gate Voltage on Hot-Carrier-Induced On-Resistance Degradation in High-Voltage n-Type Lateral Diffused Metal–Oxide–Semiconductor Transistors
- A New Dual Floating Gate Flash Cell for Multilevel Operation
- Physical and Barrier Properties of Plasma Enhanced Chemical Vapor Deposition $\alpha$-SiC:N:H Films
- The Impact of Gate-to-Source Tunneling Current on the Characterization of Metal-Oxide-Semiconductor Field-Effect Transistor's Hot-Carrier Reliability