A New Dual Floating Gate Flash Cell for Multilevel Operation
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概要
- 論文の詳細を見る
A new dual floating gate flash memory cell using constant bias voltages for multilevel operation is proposed to increase memory density. Channel hot electrons (CHE) and drain avalanche hot electrons (DAHE) are used to store different amounts of charge in different floating gates. To erase the data, channel fowler-nordheim (FN) tunneling is applied first, and then substrate hot electron (SHE) injection is utilized to prevent from over erase and tighten the threshold voltage spread. The simulation results indicate that the multilevel flash memory cell with slight modifications of triple well technology is a promising device for future multilevel operation devices.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-04-30
著者
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Chen Jack
Department Of Electrical Engineering National Chung-hsing University
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Wong Shyh-chyi
Taiwan Semiconductor Manufacturing Company
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Lin Hongchin
Departmant Of Electrical Engineering National Chung-hsing University
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Chen Jack
Department of Electrical Engineering, National Chung-Hsing University, Taichung, Taiwan, R.O.C.
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