Enhanced p-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Charge Pump for Low-Voltage Applications

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概要

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• In this paper, a power-efficient two-phase p-channel metal–oxide–semiconductor field-effect transistor (PMOSFET) charge pump with two auxiliary clocks to boost the gate biases of the switching transistors is proposed for low-voltage applications. It can increase overdrive voltages of the switching transistors, preserve low voltage drops within the transistors, and work well at a reduced supply voltage. Simulation results show that the proposed two-stage charge pump improves the voltage gain by more than 30% for 0.35 μm complementary metal–oxide–semiconductor (CMOS) field-effect transistor (FET) technology and improves the maximum power efficiency by 40% for 0.18 μm CMOS technology in comparison with Racape and Daga’s charge pump. Measurement results show that the voltage gains of the proposed two-stage charge pump are more than 95.7 and 92% at supply voltages higher than 1.4 and 0.7 V for 0.35 and 0.18 μm CMOS technologies, respectively. A compact model of power efficiency for the proposed charge pump is derived and verified by simulations and measurements. Results show that the power efficiency can be approximately 60% at low supply voltages.

• 2010-04-25

著者

• Wu Hai-ming

  Department Of Chemistry Yamanashi University:national Laboratory Of Molecular And Biomolecular Elect

• Lin Hongchin

  Departmant Of Electrical Engineering National Chung-hsing University

• Hai-Ming Wu

  Department of Electrical Engineering, National Chung-Hsing University, Taichung 402, Taiwan

• Hsu Chien-Pin

  Department of Electrical Engineering, National Chung-Hsing University, Taichung 402, Taiwan

• Chien-Pin Hsu

  Department of Electrical Engineering, National Chung-Hsing University, Taichung 402, Taiwan

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