Reduced-Ripple p-Channel Metal--Oxide--Semiconductor Field-Effect Transistor Charge Pump Circuit with Small Filtering Capacitance
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概要
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This paper presents a two-stage, two-phase, p-channel metal--oxide--semiconductor field-effect transistor (PMOSFET) charge pump with special two-step clocks for ripple reduction. The ripple voltage can be reduced by adjusting the overdrive voltage during charge transfer. The charge pump including the circuit of the proposed clocks and 5 pF boosting capacitance was fabricated using 0.35 μm complementary metal--oxide--semiconductor field-effect transistor (CMOSFET) technology in an area of 0.182 mm2. With the new clock scheme, high voltage gain and driving capacity without overstress of the transistors are preserved. The experimental results reveal that the output voltage ripple is reduced from 23.2 to 12.8 mV for an output current of 36 μA at a frequency of 10 MHz and a supply voltage of 1.8 V, which indicates a 45% ripple reduction without increasing filtering capacitance.
- 2012-02-25
著者
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Lin Hongchin
Departmant Of Electrical Engineering National Chung-hsing University
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Jaw Boy-Yiing
Department of Electrical Engineering, National Chung-Hsing University, Taichung 402, Taiwan
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Lin Hongchin
Department of Electrical Engineering, National Chung-Hsing University, Taichung 402, Taiwan
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