A p-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Charge Pump for Low Supply Voltages
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概要
- 論文の詳細を見る
In this paper, we propose a positive two-phase p-channel metal–oxide–semiconductor field-effect transistor (PMOSFET) charge pump with two auxiliary clocks to boost the gate biases of the switching transistors for low-supply-voltage applications. Owing to the effective boosting of the overdrive voltage of the charge transfer transistors, the proposed four-stage charge pump has high driving capacity and achieves a voltage gain of more than 90% with no load at a supply voltage of 1 V. The proposed charge pump was implemented using 0.18 μm standard complementary metal–oxide–semiconductor field-effect transistor (CMOSFET) technology in an area of approximately 0.205 mm2. The measurement results agree well with the simulated data, such as the simulated and measured output voltages without load reaching 8.6 and 8.28 V at a supply voltage of 1.8 V, as well as those with a 60 μA loading current producing 6.2 and 6 V at a frequency of 10 MHz, respectively.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-04-25
著者
-
Lin Hongchin
Departmant Of Electrical Engineering National Chung-hsing University
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Hsu Chien-Pin
Department of Electrical Engineering, National Chung-Hsing University, Taichung 402, Taiwan
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