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System Devices Research Laboratories Nec Corporation | 論文
- Breakdown Mechanisms and Lifetime Prediction for 90-nm-Node Low-Power HfSiON/SiO_2 CMOSFETs
- Influence of Charge Traps within HfSiON Bulk on Positive and Negative Bias Temperature Instability of HfSiON Gate Stacks
- 1.2nm HfSiON/SiON Stacked Gate Insulators for 65-nm-Node MISFETs
- Breakdown Mechanisms and Lifetime Prediction for 90nm-node Low-power HfSiON/SiO_2 CMOSFETs
- Influences of Traps within HfSiON Bulk on Positive- and Negative-Bias Temperature Instability of HfSiON Gate Stacks
- 1.2nm HfSiON/SiON stacked gate insulators for 65nm-node MISFETs
- Ferroelectric Memory Circuit Technology and the Application to Contactless IC Card(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
- Solid-Electrolyte Nanometer Switch(Novel Device Architectures and System Integration Technologies)
- Highly Enhanced Speed and Efficiency of Si Nano-Photodiode with a Surface-Plasmon Antenna
- Si Nano-Photodiode with a Surface Plasmon Antenna
- A Metallurgical Prescription Suppressing Stress-induced Voiding (SIV) in Cu lines
- Mechanical Property Control of Low-k Dielectrics for Diminishing Chemical Mechanical Polishing (CMP)-Related Defects in Cu-Damascene Interconnects
- MRAM Applications Using Unlimited Write Endurance(Next-Generation Memory for SoC,VLSI Technology toward Frontiers of New Market)
- Writing Circuitry for Toggle MRAM to Screen Intermittent Failure Mode(Integrated Electronics)
- MRAM Writing Circuitry to Compensate for Thermal Variation of Magnetization Reversal Current
- 2 V/12O ns Embedded Flash EEPROM Circuit Technology (Special Issue on ULSI Memory Technology)
- Suppression of Charges in Al_2O_3 Gate Dielectric and Improvement of MOSFET Performance by Plasma Nitridation(High-κ Gate Dielectrics)
- Suppression of Charges in Al_2O_3 Gate Dielectric and Improvement of MOSFET Performance by Plasma Nitridation
- Characteristics of 0.25 μm Ferroelectric Nonvolatile Memory with a Pb(Zr, Ti)O_3 Capacitor on a Metal/Via-Stacked Plug
- 0.25μm FeRAM with CMVP (Capacitor-on-Metal/Via-Stacked-Plug) Memory Cell