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System Devices Research Laboratories Nec Corporation | 論文
- Stability of Steady Flow in Collapsible Tubes
- Superconducting Technology for Digital Applications Using Niobium Josephson Junctions(Special Issue on Superconductive Devices and Systems)
- Technology Issues on Superconducting Digital Communication Circuits and Systems(Special Issue on Superconductive Electron Devices and Their Applications)
- Josephson Memory Technology
- A Resistor Coupled Josephson Polarity-Convertible Driver (Special Section on Superconducting Devices)
- Theoretical Analysis of Relationships between Resonator Coupling Coefficient and Phase Noise in Microwave Negative-Resistance Oscillators(Microwaves, Millimeter-Waves)
- An Automatic Bi-Directional Bus Repeater Control Scheme Using Dynamic Collaborative Driving Techniques (Interface and Interconnect Techniques, VLSI Design Technology in the Sub-100nm Era)
- Atomic Resolution TEM Images of the Au(001) Reconstructed Surface
- Epitaxy of Au and Ag on Cleaved (10, 0) Surface of MoS_2 : Surfaces, Interfaces and Films
- Logic Design of a Single-Flux-Quantum (SFQ) 2 × 2 Unit Switch for Banyan Networks(Special Issue on Superconductive Electronics)
- A Single Flux Quantum (SFQ) Packet Switch Unit towards Scalable Non-blocking Router(Special Issue on Superconductive Electronics)
- A Hybrid Switch System Architecture for Large-Scale Digital Communication Network Using SFQ Technology(Special Issue on Superconductive Electronics)
- A Novel, Large-Scale Packet Switch System and 60Gbps Arbiter Circuit Operation Using SFQ Technology
- High-Mobility Dual Metal Gate MOS Transistors with High-k Gate Dielectrics
- Fully Silicided NiSi Gate Electrodes on HfSiON Gate Dielectrics for Low-Power Applications
- High Mobility Dual Metal Gate MOS Transistors with High-k Gate Dielectrics
- Fully Silicided NiSi Gates on HfSiON Gate Dielectrics for Low Power Application
- TiN as a Phosphorus Outdiffusion Barrier Layer for WSi_x/Doped-Polysilicon Structures (Special Issue on Sub-Half Micron Si Device and Process Technologies)
- Improvement of Thermal Stability of MRAM Device with SiN Protective Film Deposited by HDP CVD
- Effect of Pressure on the Behavior of Cathode Spots in Oxide Removal by Arc Discharge