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Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd. | 論文
- Broad-Band Second-Harmonic Generation in LiNbO_3 Waveguide Using Optimized Domain-Inverted Grating
- Modeling of Mechanism of Leakage in a Shallow p^+/n Junction Formed by Preamorphization
- Effect of Deuterium Anneal on SiO_2/Si(100) Interface Traps and Electron Spin Resonance Signals of Ultrathin SiO_2 Films
- Novel Single-Step Rapid Thermal Oxynitridation Technology for Forming Highly Reliable Electrically Erasable Programmable Read-Only Memory Tunnel Oxide Films
- Kinetics of Rapid Thermal Oxidation of Silicon
- Role of SiN Bond Formed by N_2O-Oxynitridation for Improving Dielectric Properties of Ultrathin SiO_2 Films
- Integrated Tunable DBR Laser with EA-Modulator Grown by Selective Area MOVPE (Special Issue On Devices, Packaging Technology, and Subsystems for the Optical Access Network)
- Effect of W Film Stress on W-Gate MOS Characteristics
- Evaluation of Laser CVD Tungsten for Gete Electrode : Silicon Devices and Process Technologies(Solid State Devices and Materials 1)
- A Novel Clean Ti Salicide Process Using Grooved Gate Structure
- Optimization of the Amorphous Layer Thickness and the Junction Depth in the Preamorphization Method for Shallow-Junction Formation
- 5 nm Gate Oxide Grown by Rapid Thermal Processing for Future MOSFETs
- The Dielectric Reliability of Very Thin SiO_2 Films Grown by Rapid Thermal Processing : Silicon Devices and Process Technologies(Solid State Devices and Materials 1)
- Relationship between Nitrogen Profile and Reliability of Heavily Oxynitrided Tunnel Oxide Films for Flash Electrically Erasable and Programmable ROMs
- AlGaAs Semiconductor Quasiphase-Matched Wavelength Converters
- Confirmation of AlGaAs Crystal Domain Inversion Using Asymmetric Wet Etching and Optical Second-Harmonic Generation Methods
- Improvement of Threshold Voltage Uniformity in Ion-Implanted GaAs-Metal-Semiconductor Field-Effect Transistors on Si
- Thermal Stability of Interconnect of TiN/Cu/TiN Multilayered Structure
- A New Mechanism of Failure in Silicon p^+/n Junction Induced by Diffusion Barrier Metals
- 10 Gbit/s-Soliton Transmission over 5700 km in Dispersion Compensated Standard Fiber Systems