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Seiko Epson Corporation, Technology Platform Research Center | 論文
- High-Quality Gate-SiO_x and SiO_x/Si Interface Formation at Low Temperature Using Plasma-Enhanced Chemical Vapor Deposition
- Preparation of Novel PZTN Thin Film Co-doped Si
- High-Quality SiO_2/Si Interface Formation and Its Application to Fabrication of Low-Temperature-Processed Polycrystalline Si Thin-Film Transistor(Semiconductors)
- Structural Properties of Nickel Metal-Induced Laterally Crystallized Silicon Films and Their Improvement Using Excimer Laser Annealing
- Overdense Plasma Production Using Electron Cyclotron Waves
- New Microwave Launcher for Producing ECR Plasmas without Window Contamination I. : Excitation of Electron Cyclotron Wave
- Stochastic Electron Acceleration by an Electron Cyclotron Wave Propagating in an Inhomogeneous Magnetic Field
- Dry Thermal Oxidation of Polycrystalline and Amorphous Silicon Films for Application to Thin Film Transistors
- Heat Treatment with High-Pressure H_2O Vapor of Pulsed Laser Crystallized Silicon Films
- Electrical Properties of Excimer-Laser-Crystallized Lightly Doped Polycrystalline Silicon Films
- Oxidation of Amorphous Silicon for Superior Thin Film Transistors
- Oxidation of Amorphous Silicon for Superior Thin Film Transistors (OASIS TFT)
- Effects of Semiconductor Thickness on Poly-Crystalline Silicon Thin Film Transistors
- Effects of Channel Thickness on Poly-Crystalline Silicon Thin Film Transistors
- Application of As-Deposited Poly-Crystalline Silicon Films to Low Temperature CMOS Thin Film Transistors
- Wettability of Silicon Oxide with Poly-Crystalline Silicon
- TFT and Physical Properties of Poly-Crystalline Silicon Prepared by Very Low Pressure Chemical Vapour Deposition (VLPCVD)
- Electrical Properties of Pulsed Laser Crystallized Silicon Films
- Improvement of Electrical Properties of Pulsed Laser Crystallized Silicon Films by Oxygen Plasma Treatment
- Capping Layer on Thin Si Film for $\mu$-Czochralski Process with Excimer Laser Crystallization