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Seiko Epson Corp. Nagano Jpn | 論文
- High-Performance Polyclystalline Silicon Thin-Film Transistors with Low Trap Density at the Gate-SiO2/Si Interface Fabricated by Low-Temperature Process
- Classification of Driving Methods for TFT-OLEDs and Novel Proposal Using Time Ratio Grayscale and Current Uniformization(Electronic Displays)
- High Performance P-Channel Single-Crystalline Si TFTs Fabricated Inside a Location-Controlled Grain by μ-Czochralski Process(Electronic Displays)
- Extraction of Trap Densities at Front and Back Interfaces in Thin-Film Transistors
- High-Quality Gate-SiO_x and SiO_x/Si Interface Formation at Low Temperature Using Plasma-Enhanced Chemical Vapor Deposition
- Low-Temperature Formation of Device-Quality SiO_2/Si Interfaces Using Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposition
- Extraction of Trap State at the Oxide-Silicon Interface and Grain Biundary in Polycrystallune Silicon Thin-Film Transistors
- Device Simulation of Grain Boundaries in Lightly Doped Polysilicon Films and Analysis of Dependence on Defect Density
- Novel Si Codoped Pb(Zr, Ti, Nb)O_3 Thin Film for High-Density Ferroelectric Random Access Memory
- Preparation of Novel PZTN Thin Film Co-doped Si
- Relationship between Lattice Deformation and Polarization in BaTiO_3
- Electronic States of Perovskite-Type Oxides and Ferroelectricity
- Fabrication of KNbO_3 Epitaxial Thin Films on Sapphire Substrates by Pulsed Laser Deposition
- Epitaxial Growth of SrRuO_3 Thin Film Electrode on Si by Pulsed Laser Deposition
- Fabrication of Pseudocubic SrRuO_3 (100) Epitaxial Thin Films on Si by Pulsed Laser Deposition : Surfaces, Interfaces, and Films
- Microstructural Investigation of Pulsed-Laser-Deposited SrRuO_3 Films on Si with SrO Buffer Layers : Semiconductors
- Device Simulation of Carrier Transport through Grain Boundaries in Lightly Doped Polysilicon Films and Dependence on Dopant Density : Semiconductors
- Current Paths over Grain Boundaries in Polycrystalline Silicon Films : Semiconductors
- High-Quality SiO_2/Si Interface Formation and Its Application to Fabrication of Low-Temperature-Processed Polycrystalline Si Thin-Film Transistor(Semiconductors)
- Structural Properties of Nickel Metal-Induced Laterally Crystallized Silicon Films and Their Improvement Using Excimer Laser Annealing