スポンサーリンク
Seiko Epson Corp. Nagano Jpn | 論文
- Pressure-Induced Phase Transformation of Quasicrystals
- Pressure-Effect Study on the High-T_c Superconductor Bi(Pb)-Sr-Ca-Co-O System
- Pressure-Induced Amorphization of Quasi Crystals
- X_Ray Diffraction Analysis of Icosahedral Phase under High Pressures
- Low Temperature Poly-Si TFTs Using Solid Phase Crystallization of Very Thin Films and an Electron Cyclotron Resonance Chemical Vapor Deposition Gate Insulator
- Correlation between ZnSe Crystal Growth Conditions from Melt and Generation of Large-Angle Grain Boundaries and Twins
- The Indirect Determination of the Cross Section of Stimulated Emission of the F Center in KCl
- Pulse-Width Modulation with Current Uniformization for TFT-OLEDs(Electronic Displays)
- Plasma Oxidation of Silicon and Its Application to Poly-Si TFT Fabrication Process (情報ディスプレイ--The 6th Asian Symposium on Information Display & Exhibition)
- Plasma Oxidation of Silicon and its Application to Poly-Si TFT Fabrication Process
- Improved Ti Self-Aligned Silicide Technology Using High Dose Ge Pre-Amorphization for 0.10 μm CMOS and Beyond
- High Transparent Sheet Polarizer Made with Birefringent Materials
- Dry Thermal Oxidation of Polycrystalline and Amorphous Silicon Films for Application to Thin Film Transistors
- Dry Thermal Oxidation of Polycrystalline and Amorphous Silicon Films for Application to Thin Film Transistors
- Oxidation of Amorphous Silicon for Superior Thin Film Transistors
- Oxidation of Amorphous Silicon for Superior Thin Film Transistors (OASIS TFT)
- Effects of Semiconductor Thickness on Poly-Crystalline Silicon Thin Film Transistors
- Effects of Channel Thickness on Poly-Crystalline Silicon Thin Film Transistors
- Application of As-Deposited Poly-Crystalline Silicon Films to Low Temperature CMOS Thin Film Transistors
- Wettability of Silicon Oxide with Poly-Crystalline Silicon