スポンサーリンク
Seiko Epson Corp. Nagano Jpn | 論文
- Conduction Mechanism of Leakage Current Observed in Metal-Oxide-Semiconductor Transistors and Poly-Si Thin-Film Transistors
- TFT and Physical Properties of Poly-Crystalline Silicon Prepared by Very Low Pressure Chemical Vapour Deposition (VLPCVD)
- Magnetic and Metal-Insulator Transitions in β-Na_CoO_2 and γ-K_CoO_2 : NMR and Neutron Diffraction Studies (Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties)
- Impurity Effects on the Superconducting Transition Temperature of Na_zCoO_2・yH_2O (Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Optical Detection of the Hyperfine Interaction of the F Center in KCL in the Absence of Resonant Oscillating Fields
- The Spin-Mixing Parameters in the Optical Pumping Cycle of the F Centers in KBr and KI
- On "the Anomalous Effect" of the Magnetic Circular Polarization of the F Center Luminescence
- Magnetic Nature of the Relaxed Excited State of F Centers and Spin Flipping Processes in the Optical Pumping Cycle
- Influence of Crystal Strain on Superconductivity of a-Axis Oriented YBa_2Cu_3O_x Films
- Ab Initio Molecular Orbital Study of Suppression of Water Absorption and Hydrolysis(F-Removal)of Chemical-Vapor-Deposited SiOF Films by Nitrogen Doping
- Ab initio Molecular Orbital Study of Water Absorption and Hydrolysis of Chemical Vapor Deposited SiOF Films II
- Ab initio Molecular Orbital Study of Water Absorption and Hydrolysis of Chemical Vapor Deposited SiOF Films I
- Water Absorption Properties of Fluorine-Doped SiO_2 Films Using Plasma-Enhanced Chemical Vapor Deposition
- Fluorine Doped SiO_2 for Low Dielectric Constant Films in Sub-Half Micron ULSI Multilevel Interconnection
- Computer-Generated Hologram Using TFT Active Matrix Liquid Crystal Spatial Light Modulator (TFT-LCSLM)
- Effect of Oxygen Radicals for Epitaxial Growth of Al_2O_3 on Si
- Capping Layer on Thin Si Film for $\mu$-Czochralski Process with Excimer Laser Crystallization
- Structural Properties of Nickel Metal-Induced Laterally Crystallized Silicon Films and Their Improvement Using Excimer Laser Annealing