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Samsung Electronics Co. Ltd. Kyunggi‐do Kor | 論文
- Flare in Microlithographic Exposure Tools
- Trade-Off between Hot Carrier Effect and Current Driving Capability Due to Drain Contact Structures in Deep Submicron MOSFETs
- Effects of Low Temperature Interlayer Dielectric Films on the Gate Oxide Quality of Deep Submicron MOSFET's
- Effects of Low Temperature Interlayer Dielectric Films on the Gate Oxide Quality of Deep Submicron MOSFET's
- Defects study of retrograde twin well CMOS that has MeV ion implanted buried layer
- Defects study of retrograde twin well CMOS that has MeV ion implanted buried layer
- Characterization of Corner Induced Leakage Current in Shallow Silicided n^+/p Junction
- Formation of High-Temperature Stable Co-Silicide from Co_Ta_/Si Systems
- The Formation of High Temperature Stable Co-Silicide from Co_Ta_x/Si Systems
- Shallow Trench Isolation Characteristics with High-Density-Plasma Chemical Vapor Deposition Gap-Fill Oxide for Deep-Submicron CMOS Technologies
- Dependence of Subthreshold Hump and Reverse Narrow Channel Effect on the Gate Length by Suppression of Transient Enhanced Diffusion at Trench Isolation Edge
- Dependence of Sub-Threshold Hump and RNWE Characteristics on the Gate Length by TED
- Dependence of Reverse Narrow Width Effect and Sub-threshold Hump Characteristics on the Gate length
- Dependence of Reverse Narrow Width Effect and Sub-threshold Hump Characteristics on the Gate length
- Dependence of Reverse Narrow Width Effect and Sub-threshold Hump Characteristics on the Gate length
- A Study on the Germano-Silicide Formation in the Ni/Si_Ge_x System for CMOS Device Applications
- Characterization of Corner-Induced Leakage Current of a Shallow Silicided n^+/p Junction for Quarter-Micron MOSFETs
- Study of Drain Contact Structure Dependent Deep Submicron MOSFET Reliability by Photon Emission Analysis
- Motor-Current-Based Real-Time End Point Detection of Shallow-Trench-Isolation Chemical Mechanical Polishing Process Using High-Selectivity Slurry
- FEOL Process for Sub-100nm DRAM