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Research and Development Center, TOSHIBA Corporation | 論文
- 音響ノーダルポイントを利用する1次音源1個、2次音源2個のアクティブ音響パワー制御
- Structural Features and Superconducting Properties of As-Grown Y-Ba-Cu-O Films
- Security Mechanism of Privacy Enhanced Shared File System Suitable for Mobile Access (Special Section on Cryptography and Information Security)
- A310 CHLORINE REMOVAL FROM PLASTIC-IMPREGNATED MSW FOR PRODUCING SOLID FUEL USING INNOVATIVE LOW TEMPERATURE HYDROTHERMAL TREATMENT TECHNOLOGY(Fuel)
- High-Power InGaAIP Laser Diodes for High-Density Optical Recording : Visible Lasers
- High-Power InGaAlP Laser Diodes for High-Density Optical Recording
- Reliable High-Power Operation of InGaAlP Visible Light Laser Diodes with Strained Active Layer
- In Situ Characterization of the Initial Growth Stage of GaAs on Si by Coaxial Impact-Collision Ion Scattering Spectroscopy
- High-Density Recording Characteristics of a 90 mm Phase-Change Optical Disk
- Performance Evaluation of a Processing Element for an On-Chip Multiprocessor (Special Issue on Super Chip for Intelligent Integrated Systems)
- A Resonant-Type GaAs Switch IC with Low Distortion Characteristics for 1.9GHz PHS (Special Issue on Microwave and Millimeterwave High-power Devices)
- Influence of V/III Molar Ratio on Deep Traps in Metalorganic Chemical Vapor Deposition Grown InAlAs Layers
- Optimization of Polysilane Structure as Fast-Etching Bottom Antireflective Coating for Deep Ultraviolet Lithography
- Effects of Growth Parameters on Oxygen Incorporation into InGaAlP Grown by Metalorganic Chemical Vapor Deposition
- Design Study on RF Stage for Miniature PHS Terminal (Special Issue on Microwave Devices for Mobile Communications)
- Single 3-V Supply Operation GaAs Linear Power MESFET Amplifier for 5.8-GHz ISM Band Applications (Special Issue on Microwave and Millimeter Wave Technology)
- 0.012-cc Miniaturized GaAs P-Pocket Power MESFET Amplifier Operating with a Single Voltage Supply for PHS Applications
- A Self-Aligned Gate AlGaAs/GaAs Heterostructure Field-Effect Transistor with an Ion-Implanted Buried-Channel for use in High Efficiency Power Amplifiers
- A Buried-Channel Self-Aligned GaAs MESFET with High Power-Efficiency and Low Noise-Figure for 1.9-GHz Single-Chip Front-End MMICs (Special Issue on Low-Power and High-Speed LSI Technologies)
- Gate Current Control Method by Pull-Down FET's for 0-28dB GaAs Variable Attenuator in Direct-Conversion Modulator IC for 1.9GHz PHS (Special Issue on Microwave and Millimeterwave High-power Devices)