Influence of V/III Molar Ratio on Deep Traps in Metalorganic Chemical Vapor Deposition Grown InAlAs Layers
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-07-01
著者
-
Fujita Shinobu
Research And Development Center Toshiba Corporation
-
NARITSUKA Shigeya
Research and Development Center, Toshiba Corporation
-
NODA Takao
Research and Development Center, Toshiba Corporation
-
WAGAI Aki
Research and Development Center, Toshiba Corporation
-
ASHIZAWA Yasuo
Research and Development Center, Toshiba Corporation
-
Wagai Aki
Research And Development Center Toshiba Corporation
-
Noda Takao
Research And Development Center Toshiba Corporation
-
Ashizawa Y
Research And Development Center Toshiba Corporation
-
Naritsuka Shigeya
Research And Development Center Toshiba Corporation
関連論文
- Influence of V/III Molar Ratio on Deep Traps in Metalorganic Chemical Vapor Deposition Grown InAlAs Layers
- Interface Study on GaAs-on-Si by Transmission Electron Microscopy : Surfaces, Interfaces and Films