スポンサーリンク
Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan | 論文
- Analytical Approach for Enhancement of n-Channel Metal--Oxide--Semiconductor Field-Effect Transistor Performance with Carbon-Doped Source/Drain Formed by Molecular Carbon Ion Implantation and Laser Annealing
- Evaluation of the Strain around an Isolated Shallow Trench and the Impact of Stress on LSI Device Performance
- Cu Dual-Damascene Interconnects with Direct Chemical Mechanical Polishing Process on Porous Low-$k$ Film
- Characterizations of NiSi2-Whisker Defects in n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with $\langle 110\rangle$ Channel on Si(100)
- Analysis of sidewall damage layer in low-k film using the interline dielectric capacitance measurements (Special issue: Advanced metallization for ULSI applications)
- Narrow Line Effect of Nickel Silicide on p+ Active Lines and Its Suppression by Fluorine Ion Implantation
- $V_{\text{ox}}/E_{\text{ox}}$-Driven Breakdown of Ultrathin SiON Gate Dielectrics in p-Type Metal Oxide Semiconductor Field Effect Transistors under Low-Voltage Inversion Stress
- Evaluation of Threshold-Voltage Variation in Silicon on Thin Buried Oxide Complementary Metal–Oxide–Semiconductor and Its Impact on Decreasing Standby Leakage Current
- Wide-Range Threshold Voltage Controllable Silicon on Thin Buried Oxide Integrated with Bulk Complementary Metal Oxide Semiconductor Featuring Fully Silicided NiSi Gate Electrode
- Developments of Plasma Etching Technology for Fabricating Semiconductor Devices
- Three-Dimensional Visualization Technique for Crystal Defects in High Performance p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Embedded SiGe Source/Drain
- Enhanced Performance of Gate-First p-Channel Metal–Insulator–Semiconductor Field-Effect Transistors with Polycrystalline Silicon/TiN/HfSiON Stacks Fabricated by Physical Vapor Deposition Based In situ Method
- Investigation and Integration of Polycrystalline Silicon/TiN/SiON Gate Stack in Silicon on Thin Buried Oxide Complementary Metal Oxide Semiconductor Field Effect Transistors
- Anomalous Nickel Silicide Encroachment in n-Channel Metal–Oxide–Semiconductor Field-Effect Transitors on Si(110) Substrates and Its Suppression by Si+ Ion-Implantation Technique
- Performance of Cu Dual-Damascene Interconnects Using a Thin Ti-Based Self-Formed Barrier Layer for 28 nm Node and Beyond
- Phase and Composition Control of Ni Fully Silicided Gates by Nitrogen Ion Implantation and Double Ni Silicidation
- Polymorphs Discrimination of Nickel Silicides in Device Structure by Improved Analyses of Low Loss Electron Energy Loss Spectrum
- Compositional Transformation between Cu Centers by Annealing in Cu-Diffused Silicon Crystals Studied with Deep-Level Transient Spectroscopy and Photoluminescence
- Influence of Cu-Ion Migration and Fine-Line Effect on Time-Dependent Dielectric Breakdown Lifetime of Cu Interconnects
- Stress Analysis for Chip–Package Interaction of Cu/Low-$k$ Multilayer Interconnects