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Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan | 論文
- Size Reduction and Phosphorus Doping of Silicon Nanocrystals Prepared by a Very High Frequency Plasma Deposition System
- Bonding and Photoluminescence Characteristics of GaInAsP/InP Membrane Structure on Silicon-on-Insulator Waveguides by Surface Activated Bonding
- Visible Electroluminescence from Spherical-Shaped Silicon Nanocrystals
- Formation Mechanism of 100-nm-Scale Periodic Structures in Silicon Using Magnetic-Field-Assisted Anodization
- GaInAsP/InP Membrane Buried Heterostructure Distributed Feedback Laser with Air-Bridge Structure
- 85 °C Continuous-Wave Operation of GaInAsP/InP-Membrane Buried Heterostructure Distributed Feedback Lasers with Polymer Cladding Layer
- Properties of Hydrogenated Microcrystalline Cubic Silicon Carbide Films Deposited by Hot Wire Chemical Vapor Deposition at a Low Substrate Temperature
- Low-Threshold-Current Operation of High-Mesa Stripe Distributed Reflector Laser Emitting at 1540 nm
- Very High Electric Isolation Resistance between Distributed Reflector Laser and Front Power Monitor through Deeply Etched Narrow Groove
- Continuous Wave Operation of Thin Film Lateral Current Injection Lasers Grown on Semi-Insulating InP Substrate
- Single-Mode Operation of GaInAsP/InP-Membrane Distributed Feedback Lasers Bonded on Silicon-on-Insulator Substrate with Rib-Waveguide Structure
- Channel Length Scaling and Surface Nitridation of Silicon Nanocrystals for High-Performance Electron Devices
- Atomic Force Microscope Current-Imaging Study for Current Density through Nanocrystalline Silicon Dots Embedded in SiO2
- Channel Length Scaling and Surface Nitridation of Silicon Nanocrystals for High-Performance Electron Devices (Special Issue : Solid State Devices and Materials)
- Direct Wafer Bonding of GaInAsP/InP Membrane Structure on Silicon-on-Insulator Substrate