スポンサーリンク
Nanoelectronics Research Institute Aist | 論文
- 1/N Expansion with the Hubbard Operators
- A 0.7-V Opamp in Scaled Low-Standby-Power FinFET Technology
- A 0.7-V Opamp in Scaled Low-Standby-Power FinFET Technology
- Device Design Consideration for $V_{\text{th}}$-Controllable Four-Terminal Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor
- Dual-Metal-Gate Transistors with Symmetrical Threshold Voltages Using Work-Function-Tuned Ta/Mo Bilayer Metal Gates
- Ta/Mo Stack Dual Metal Gate Technology Applicable to Gate-First Processes
- P-Channel Vertical Double-Gate MOSFET Fabricated by Utilizing Ion-Bombardment-Retarded Etching Processs
- Demonstration and Analysis of Accumulation-Mode Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor
- Magneto-Optical Studies of Ferromagnetic Cr-Doped GaN Films Grown by Molecular Beam Epitaxy
- Evaluation of Spin-Transfer Switching in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions
- High Tunnel Magnetoresistance at Room Temperature in Fully Epitaxial Fe/MgO/Fe Tunnel Junctions due to Coherent Spin-Polarized Tunneling
- Disagreement between Magnetic and Magneto-Optical Properties in Cr-doped GaN Films on Si(111) Substrates Grown by Metal Organic Molecular Beam Epitaxy
- Isotope Effect in Multi-Band and Multi-Channel Attractive Systems and Inverse Isotope Effect in Iron-Based Superconductors
- Programmable Conductivity of Silicon Nanowires with Side Gates by Surface Charging
- Reply to "Comment on 'Isotope Effect in Multi-Band and Multi-Channel Attractive Systems and Inverse Isotope Effect in Iron-Based Superconductors"'
- Atomic Layer Deposition of SiO
- Atomic Layer Deposition of SiO₂ for the Performance Enhancement of Fin Field Effect Transistors
- Field-induced Magnetic Anisotropy of Single-Crystal GeNi_2O_4(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)