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NTT System Electronics Laboratories | 論文
- The Effect of an Organic Base in Chemically Amplified Resist on Patterning Characteristics Using KrF Lithography
- Metal-Free Acid Generators for Chemically Amplified Monodispersal Polyhydroxystyrene-Based Positive Resist and Post-Exposure Delay Problem
- A 40-Gb/s 8×8 ATM Switch LSI Using 0.25-μm CMOS/SIMOX(Special Issue on Multimedia, Network, and DRAM LSIs)
- Sodium Contamination in SiO_2 Films Induced by Plasma Ashing
- Transmission Electron Microscope Observations of Interfaces in YBa_2Cu_3O_x/BaSnO_3/YBa_2Cu_3O_x trilayers
- Correlated Pinning Behavior in ErBa_2Cu_3O_y Films with Columnar Defects
- Effects of BaMO_3 (M = Zr, Sn) Nanorods on Critical Temperature of ErBa_2Cu_3O_y Films
- 49-GHz Operation of an SCFL Static Frequency Divider Using High-Speed Interconnections and InP-Based HEMTs (Special Issue on Microwave and Millimeter Wave Technology)
- Highly Stable Device Characteristics of InP-Based Enhancement-Mode High Electron Mobility Transistors with Two-Step-Recessed Gates
- 30-nm-Gate InP-Based Lattice-Matched High Electron Mobility Transistors with 350 GHz Cutoff Frequency
- Improvement Recessed-Gate Structure for Sub-0.1-μm-Gate InP-Based High Electron Mobility Transistors
- Novel Gate-Recess Process for the Reduction of Parasitic Phenomena Due to Side-Etching in InAlAs/InGaAs HEMTs
- A 156 Mb/s CMOS Clock Recovery Circuit for Burst-Mode Transmission (Special Section on Analog Circuit Techniques for System-on-Chip Integration)
- A 0.1μm Au/WSiN Gate GaAs MESFET with New BP-LDD Structure and Its Applications
- Ultra-High-Speed GaAs MESFET IC Modules Using Flip Chip Bonding (Special Issue on Ultra-High-Speed IC and LSI Technology)
- A New Routing Method Considering Neighboring-Wire Capacitance Constraints
- Features of Ultimately Miniaturized MOSFETs/SOI : A New Stage in Device Physics and Design Concepts
- Identification of Surface Atoms of LiGaO_2(001) Substrate for Hexagonal GaN Film by Coaxial Impact Collision Ion Scattering Spectroscopy
- Quantum Efficiency of InP/InGaAs Uni-Traveling-Carrier Photodiodes at 1.55-1.7 μm Measured Using Supercontinuum Generation in Optical Fiber
- Quantum Efficiency of InP/InGaAs Uni-Traveling-Carrier Photodiodes at 1.55-1.7um Measured Using Supercontinuum Generation in Optical Fiber