A 0.1μm Au/WSiN Gate GaAs MESFET with New BP-LDD Structure and Its Applications
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概要
- 論文の詳細を見る
A 0.1-μm gate-length GaAs MESFET technology is reported. A 48.3-GHz dynamic-frequency divider, and an amplifier with 20-dB gain and 17.5-GHz bandwidth are successfully fabricated by integrating over-100-GHz-cut-off frequency MESFETs using a new lightly-doped drain structure with a buried p-layer (BP-LDD)device structure.
- 社団法人電子情報通信学会の論文
- 1995-09-25
著者
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Nishimura Kazumi
Ntt System Electronics Laboratories
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Hirano Makoto
Ntt Lsi Laboratories
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Nishimura K
Kddi R&d Laboratories Inc.:optical Industry And Technology Development Association
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Tokumitsu Masami
NTT LSI Laboratories
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Nishimura Kazumi
NTT LSI Laboratories
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Yamasaki Kimiyoshi
NTT LSI Laboratories
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YAMASAKI Kimiyoshi
NTT System Electronics Laboratories
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NISHIMURA Kazutoshi
NTT Human Interface Laboratories
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Tokumitsu M
Ntt Electronics Corporation
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Nishimura Kazuhiro
Department Of Electrical & Electronic Engineering. Toyohashi University Of Technology
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