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NTT System Electronics Laboratories | 論文
- Delay Calculation Method for SRAM-based FPGAs (Special Section on VLSI Design and CAD Algorithms)
- Input Power Dependence of Large-Signal Microwave Characteristics of Resonant-Tunneling High Electron Mobility Transistors
- Improved Response of Uni-Traveling-Carrier Photodiodes by Carrier Injection
- Characteristics of the Electric Capacitance and Dielectric Loss of the Thermal Oxide of Porous Silicon Formed Using Highly Phosphorus Diffused Silicon
- Low dc Power Si-MOSFET L- and C-Band Low Noise Amplifiers Fabricated by SIMOX Technology (Special Issue on Ultra-High-Speed IC and LSI Technology)
- A High-Performance Multicast Switch and Its Feasibility Study
- A 2.6-Gbps/pin SIMOX-CMOS Low-Voltage-Swing Interface Circuit (Special Issue on Ultra-High-Speed LSIs)
- 3-Gb/s CMOS 1:4 MUX and DEMUX ICs
- A Low-Power and High-Speed Impulse-Transmission CMOS Interface Circuit
- Electrical Characterization of InGaP/GaAs Heterointerfaces Grown by Metalorganic Chemical Vapor Deposition
- Mask Contamination Induced by X-Ray Exposure
- High Output Power (>20 W) and High Quantum Efficiency in a Photopumped ZnSe/ZnSSe Blue Laser Operating at Room Temperature
- Near-Room-Temperature Photopumped Blue Lasers in ZnS_xSe_/ZnSe Multilayer Structures
- The Potential of Ultrathin-Film SOI Devices for Low-Power and High-Speed Applications (Special Issue on SOI Devices and Their Process Technologies)
- Sub 1-V MTCMOS/SIMOX Circuit Technology
- Layered-Oxide-Isolation (LOXI) Metal-Semiconductor Field Effect Transistor (MESFET) for Low Parasitic Source-Drain Capacitance
- High-Speed Response of Uni-Traveling-Carrier Photodiodes
- Application of Mark Detection Using the Vibration Method to an Electron Beam Exposure System
- Upper-bound Frequency for Measuring mm-Wave-Band Dielectric Characteristics of Thin Films on Semiconductor Substrates
- Crosstalk-Suppressed Readout System Using Shading Band