Electrical Characterization of InGaP/GaAs Heterointerfaces Grown by Metalorganic Chemical Vapor Deposition

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1998-11-01

著者

• Nittono Takumi

  Ntt System Electronics Laboratories

• Maeda Narihiko

  Ntt Basic Research Laboratories

• Fukai Yoshino

  Ntt System Electronics Laboratories

• HYUGA Fumiaki

  NTT System Electronics Laboratories

関連論文

• Superior Pinch-Off Characteristics at 400℃ in AlGaN/GaN Heterostructure Field Effect Transistors
• Enhanced Electron Mobility in AlGaN/InGaN/AlGaN Double-Heterostructures by Piezoelectric Effect
• Electrical Characterization of InGaP/GaAs Heterointerfaces Grown by Metalorganic Chemical Vapor Deposition
• Symmetric and Asymmetric InGaP/InGaAs/GaAs Heterostructure MESFET's and Their Application to V-Band Amplifiers(Special Issue on Microwave and Millimeter-Wave Module Technology)

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