The Potential of Ultrathin-Film SOI Devices for Low-Power and High-Speed Applications (Special Issue on SOI Devices and Their Process Technologies)

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概要

• 論文の詳細を見る

• For low-voltage, high-speed operation of LSIs, the most attractive features in fully-depleted (FD) SOI devices are their steep subthreshold slope and reduced drain junction capacitance. This paper discusses the impact of these features on circuit performance. FD SOI devices can have a threshold voltage of more than 100mV lower than that of bulk devices within the limits of acceptable off-state leakage current. Thus they hold higher driving current even at supply voltages of less than 1V. On the other hand, the reduced junction capacitance is effective to suppress the total parasitic capacitance especially in lightly loaded CMOS circuits. These attractive features improve the speed performance in FD SOI circuits remarkably at supply voltages of less than 1V. For high-speed circuit applications, 0.25-μm-gate SIMOX circuits, such as frequency dividers, prescalers, MUX, and DEMUX, can operate at up to 1-2GHz even at a supply voltage of 1V. CMOS/SIMOX logic LSIs also exhibit better performance at very low supply voltages. At merely 1V, a SIMOX logic LSI could be functional at up to 60-90MHz using 0.26-0.34μW/MHz/Gate of power dissipation. Furthermore, SIMOX logic LSIs will allow 20-30MHz operation at 0.5V of a solar cell with reasonable chip size. These investgations lead to the conclusion that FD CMOS/SIMOX technology will have a large impact on the development of low-voltage high-performance LSIs for portable digital equipment and telecommunication systems.

• 社団法人電子情報通信学会の論文
• 1997-03-25

著者

• KADO Yuichi

  NTT System Electronics Laboratories

• Kado Yuichi

  Ntt System Electronics Laboratories Si Device Research Group

関連論文

• 300-kilo-Gate Sea-of-Gate Type Gate Arrays Fabricated Using 0.25-μm-Gate Ultra-Thin-Film Fully-Depleted Complementary Metal-Oxide-Semiconductor Separation by IMplanted OXygen (CMOS/SIMOX) Technology with Tungsten-Covered Source and Drain
• The Potential of Ultrathin-Film SOI Devices for Low-Power and High-Speed Applications (Special Issue on SOI Devices and Their Process Technologies)

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