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NTT System Electronics Laboratories | 論文
- Real-Time Spatial Data Management for Scalable Networked Augmented Virtual Spaces (Special Issue on New Generation Database Technologies)
- Fabrication of Small AlGaAs/GaAs HBT's for Integrated Circuits Using New Bridged Base Electrode Technology
- Current-Induced Degradation of AlGaAs/GaAs Heterojunction Bipolar Transistors and Its Suppression by Thermal Annealing in As Overpressure
- Overlay Repeatability in Mix-and-Match Exposure Using the SR Stepper: SS-1
- A CAD-Based Low-Power Design Methodology for Very High-Speed Si Bipolar Standard Cell LSIs (Special Issue on Low-Power and High-Speed LSI Technologies)
- Influences of Superficial Si Layer Thickness on Band-to-Band Tunneling Current Characteristics in Ultra-Thin n-Channel Metal- Oxide-Semiconductor Field-Effect-Transistor by Separation by lMplanted OXygen (nMOSFET /SIMOX)
- A Novel Functional Logic Circuit Using Resonant-Tunneling Devices for Multiple-Valued Logic Applications
- Formation of Aluminium Nitride by Nitrogen-Ion Implantation in Aluminium Single Crystal
- Copper Damascene Interconnection with Tungsten Silicon Nitride Diffusion Barrier Formed by Electron Cyclotron Resonance Plasma Nitridation
- Diffusion Barrier Mechanism of Extremely Thin Tungsten Silicon Nitride Film Formed by ECR Plasma Nitridation
- Low-Cost Hybrid WDM Module Consisting of a Spot-Size Converter Integrated Laser Diode and a Waveguide Photodiode on a PLC Platform for Access Network Systems (Special Issue On Devices, Packaging Technology, and Subsystems for the Optical Access Network)
- Photoreflectance Characterization of a Channel Layer of InAlAs/InGaAs High Electron Mobility Transistor Wafers
- Low-Temperature Deposition of SrTiO_3 Thin Films by Electron-Cyclotron-Resonance Sputtering for Monolithic Microwave Integrated Circuits Operatirng in the mm-Wave Band
- Numerical Analysis of Tunneling Current due to Electric Field Concentration at Gate Edge of Polysilicon/SiO_2/Silicon Structures
- フィルタ・限流器に向けたPLD法, フッ素フリーMOD法によるREBa_2Cu_3O_超電導薄膜
- Symmetric and Asymmetric InGaP/InGaAs/GaAs Heterostructure MESFET's and Their Application to V-Band Amplifiers(Special Issue on Microwave and Millimeter-Wave Module Technology)
- X-Ray Mask Inspection Using Replicated Resist Patterns
- Gate and Recess Engineering for Ultrahigh-Speed InP-Based HEMTs (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- High-Resolution Scanning Electron Microscopy Observation of Electrochemical Etching in the Formation of Gate Grooves for InP-Based Modulation-Doped Field-Effect Transistors
- Precise Angle and Position Detection Utilizing Optical Interference on Metal-Oxide-Semiconductor-Type Position-Sensitive Detectors