A CAD-Based Low-Power Design Methodology for Very High-Speed Si Bipolar Standard Cell LSIs (Special Issue on Low-Power and High-Speed LSI Technologies)
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概要
- 論文の詳細を見る
A computer-aided low-power design methodology for very high-speed Si bipolar standard cell LSI is described. In order to obtain Gbit/s-speed operation, it features a pair of differential clock channels inside cells and a highly accurate static timing analysis for back annotation. A newly developed CAD-based power optimization scheme minimizes cell currents while maintaining circuit speed. A 5.6 k gate SDH signal-processing LSI operating at 1.6 Gbit/s with only 3.9 W power consumption demonstrates the effectiveness of this design technology.
- 社団法人電子情報通信学会の論文
- 1997-12-25
著者
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Koike Keiichi
Ntt System Electronics Laboratories
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Takei Yuichiro
Ntt System Electronics Laboratories
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Ichino Haruhiko
Ntt Optical Network Systems Laboratories
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Kawai K
Ntt Optical Network Systems Laboratories
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Onozawa Akira
Ntt Multimedia Networks Laboratories
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KAWAI Kenji
NTT Optical Network Systems Laboratories
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KOBAYASHI Yoshiji
NTT Electronics Technology Corporation
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ONOZAWA AKIRA
NTT Microsystem Integration Laboratories
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- A CAD-Based Low-Power Design Methodology for Very High-Speed Si Bipolar Standard Cell LSIs (Special Issue on Low-Power and High-Speed LSI Technologies)
- Low-Power Circuit Design Techniques for Si Bipolar Gbit/s LSIs : An Overview (Special Issue on Low-Power and High-Speed LSI Technologies)
- A Balanced-Mesh Clock Routing Technique for Performance Improvement