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NTT System Electronics Laboratories | 論文
- Chemical Composition of Al_2O_3/InP Metal-Insulator-Semiconductor Interfaces Improved by Plasma and Ultraviolet Oxidation
- Analog LSI Circuit Design Issues for Optical Transmission Systems (Special Issue on Circuit Technologies for Memory and Analog LSIs)
- Dependence of YBa_2Cu_3O_ Ultrathin Film Surface Morphology on Substrate and Growth Temperature
- Gate Oxide Defects in MOSLSIs and Octahedral Void Defects in Czochralski Silicon
- Atmosphere Dependence in Phosphorus Pileup at the Silicon Surface during Isochronal Heating
- Improvement of E-Beam Observability by Testing-Pad Placement in LSI Design Layout
- The Effect of Sampling-Pulse Pedestals on Temporal Resolution in Electro-Optic Sampling
- Hole Pattern Fabrication using Halftone Phase-Shifting Masks in KrF Lithography
- Manipulation of Large-Scale Polynomials Using BMDs (Special Section on VLSI Design and CAD Algorithms)
- Evaluation of Hot-Hole-Induced Interface Traps at the Tunnel-SiO_2 (3.5 nm)/Si Interface by the Conductance Technique
- 10-GHz Operation of Multiple-Valued Quantizers Using Resonant-Tunneling Devices (Special Issue on Multiple-Valued Logic and Its Applications)
- A Theoretical Investigation of the Potential for Infer-Surface Migration of Ga Adatoms between GaAs(001) and (111)B Surfaces
- System Electronics Technologies for Video Processing and Applications (Special Section on VLSI for Digital Signal Processing)
- 25aEB-10 2011年第42回国際物理五輪(IPhO)日本代表訓練 : 実験研修(25aEB 物理教育,領域13(物理教育,物理学史,環境物理))
- Optoelectronic Flexible-Function Logic Gate Using Monostable-Bistable Transition of Serially Connected Resonant Tunneling Transistors
- Optoelectronic Flexible-Function Logic Gate Using Monostable-Bistable Transition of Serially Connected Resonant Tunneling Transistors
- Threshold Logic Function on Both Positive and Negative Weighted Sums in Multiple-Input Monostable-Bistable Transition Logic Elements
- Monte Carlo Study of Charge Injection Transistors (CHINTs)
- Effect of Thin-Film Texture and Zirconium Diffusion on Reliability against Electromigration in Chemical-Vapor-Deposited Copper Interconnects
- The Effect of Film Texture and Zirconium Diffusion on Reliability Against Electromigration for CVD Copper