Influences of Superficial Si Layer Thickness on Band-to-Band Tunneling Current Characteristics in Ultra-Thin n-Channel Metal- Oxide-Semiconductor Field-Effect-Transistor by Separation by lMplanted OXygen (nMOSFET /SIMOX)

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概要

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• The band-to-band tunneling current characteristics of buried-channel nMOSFETs/SIMOX are investigated. It is shown that the drain current due to band-to-band tunneling current increases with decreasing superficial Si layer thickness, Two-dimensional device simulation results indicate that the decrease in superficial Si layer thickness leads to an increase in surface electric field in the gate-overlapped drain region. The device simtulation results also suggest that the doping profile in the diffusion region affects the surface electric field moderately. The expression of surface electric field is improved to incltude the terms that depend on Si layer thickness and diffusion profile. This improved expression results in a quantitative coincidence between calculation and experimental results.

• 社団法人応用物理学会の論文
• 1997-03-01

著者

• Ishiyama Toshihiko

  Ntt Basic Research Laboratories

• OMURA Yasuhisa

  NTT System Electronics Laboratories

関連論文

• Features of Ultimately Miniaturized MOSFETs/SOI : A New Stage in Device Physics and Design Concepts
• Influences of Superficial Si Layer Thickness on Band-to-Band Tunneling Current Characteristics in Ultra-Thin n-Channel Metal- Oxide-Semiconductor Field-Effect-Transistor by Separation by lMplanted OXygen (nMOSFET /SIMOX)
• Negative Conductance Properties in Extremely Thin Silicon-on-Insulator (SOI) Insulated-Gate pn-Junction Devices (SOI Surface Tunnel Transistors)

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