Features of Ultimately Miniaturized MOSFETs/SOI : A New Stage in Device Physics and Design Concepts

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概要

• 論文の詳細を見る

• This paper describes what happens when the silicon layer is extremely thinned. The discussion shows that quantum mechanical short-channel effects impose limits on the down-scaling of MOSFET/SOI devices. However, thinning the silicon layer should bring new possibilities such as mobility enhancement, velocity overshoot enhancement, suppression of band-to-band tunneling, suppression of impact ionization and so on. Furthermore, the non-stationary energy transport in extremely miniaturized ultra-thin MOSFET/SOI devices is also addressed from the viewpoint of hot-carrier immunity. Related device physics are also discussed in order to consider the design methodology for contemporary MOSFET/SOI devices and new device applications for the future.

• 社団法人電子情報通信学会の論文
• 1997-03-25

著者

• Omura Y

  Ntt System Electronics Laboratories

• OMURA Yasuhisa

  NTT System Electronics Laboratories

関連論文

• Features of Ultimately Miniaturized MOSFETs/SOI : A New Stage in Device Physics and Design Concepts
• Influences of Superficial Si Layer Thickness on Band-to-Band Tunneling Current Characteristics in Ultra-Thin n-Channel Metal- Oxide-Semiconductor Field-Effect-Transistor by Separation by lMplanted OXygen (nMOSFET /SIMOX)
• Negative Conductance Properties in Extremely Thin Silicon-on-Insulator (SOI) Insulated-Gate pn-Junction Devices (SOI Surface Tunnel Transistors)

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