Negative Conductance Properties in Extremely Thin Silicon-on-Insulator (SOI) Insulated-Gate pn-Junction Devices (SOI Surface Tunnel Transistors)

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概要

• 論文の詳細を見る

• In this paper the occurrence of negative conductance at temperatures of less than 90 K in a silicon-on-insulator (SOI) surface tunnel transistor with a 10-nm-thick silicon layer fabricated on a separation by implanted oxygen (SIMOX) substrate is reported. Through comparison with the performance of an SOI surface tunnel transistor with a 90-nm-thick silicon layer, the advantages of the two-dimensional confinement effect are shown.

• 社団法人応用物理学会の論文
• 1996-11-01

著者

• OMURA Yasuhisa

  NTT System Electronics Laboratories

関連論文

• Features of Ultimately Miniaturized MOSFETs/SOI : A New Stage in Device Physics and Design Concepts
• Influences of Superficial Si Layer Thickness on Band-to-Band Tunneling Current Characteristics in Ultra-Thin n-Channel Metal- Oxide-Semiconductor Field-Effect-Transistor by Separation by lMplanted OXygen (nMOSFET /SIMOX)
• Negative Conductance Properties in Extremely Thin Silicon-on-Insulator (SOI) Insulated-Gate pn-Junction Devices (SOI Surface Tunnel Transistors)

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