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NTT System Electronics Laboratories | 論文
- Acoustic Radiation Induced by Intensity Modulated Ion Beam
- 10 Gbit / s, 35mV Decision IC Using 0.2μm GaAs MESFETs (Special Section of Letters Selected from the '92 Fall Conference and the '93 Spring Conference)
- Improving the Characteristics of Ultra-Thin-Film Fully-Depleted Metal-Oxide-Semiconductor Field Effect Transistors on SIMOX (Separation by IMplanted OXygen) by Selective Tungsten Deposition on Source and Drain Region
- 300-kilo-Gate Sea-of-Gate Type Gate Arrays Fabricated Using 0.25-μm-Gate Ultra-Thin-Film Fully-Depleted Complementary Metal-Oxide-Semiconductor Separation by IMplanted OXygen (CMOS/SIMOX) Technology with Tungsten-Covered Source and Drain
- Deep-Submicron Single-Gate Complementary Metal Oxide Semiconductor (CMOS) Technology Using Channel Preamorphization
- Deep-Submicron Single-Gate CMOS Technology Using Channel Preamorphization
- Gate Oxide Defects in MOSLSIs and Octahedral Void Defects in Czochralski Silicon
- Fabrication of All-Epitaxial High-T_c SIS Tunnel Structures (Special Section on Superconducting Devices)
- GaN Thin Film Growth on LiGaO_2 Substrate with a Multi-Domain Structure
- >LiGa0_2 Single Crystals for a Substrate of Hexagonal GaN Thin Films
- Epitaxial Nature of New Insulating Material BaSnO_3 for YBa_2Cu_3O_x-SIS Junctions (Special Issue on Toward Digital and Analog Applications of Superconductors)
- A 100 kV Electron Gun for the X-Ray Mask Writer, EB-X2
- Simulation of X-Ray Mask Pattern Displacement
- A New Proximity Parameter Evaluation Method Utilizing Auxiliary Patterns for Dose Compensation
- Mechanism of Electron Emission from the Ferroelectric Ceramic Cathode
- Effects of Polarization Reversal and Surface Conditions on the Ferroelectric Electron Emission
- A 100-kV, 100-A/cm^2 Electron Optical System for the EB-X3 X-Ray Mask Writer
- New Resist Technologies for 0.25-μm Wiring Pattern Fabrication with KrF Lithography
- Spatial Frequency Doubling Method by Image Superimposition for Sub-0.15-μm Optical Lithography
- Spatial Frequency Doubling Method for Sub-0.15-μm Optical Lithography