Epitaxial Nature of New Insulating Material BaSnO_3 for YBa_2Cu_3O_x-SIS Junctions (Special Issue on Toward Digital and Analog Applications of Superconductors)
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概要
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BaSnO_3 is proposed as a new insulating material with good surface coverage of the lower superconductor electrode for superconductor/insulator/superconductor (SIS)tunnel junctions made of high-T_c superconductor Yba_2Cu_3O_x (YBCO). This paper reports on investigation of the epitaxial nature of BaSnO_3 on YBCO thin films and YBCO/BaSnO_3/YBCO trilayer formation that are grown in situ by reactive co-evaporation in oxygen radicals. Investigation was done by reflection high-energy electron diffraction (RHEED), atomic force microscopy (AFM) , and X-ray diffraction (XRD) . These observations confirm that (001) -oriented YBCO and (100) -oriented BaSnO_3 thin films with atomically smooth surfaces grow epitaxially on each other. In addition, cross-sectional transmission electron microscopy (TEM) observation reveals that an approximately 4-nm-thick layer of BaSnO_3 perfectly covers the lower YBCO thin film surface steps to a height of 1 to 2 unit cells of YBCO. The zero-resistance critical temperature T_<c zero> of both the upper and the lower YBCO thin films is higher than about 86K.
- 社団法人電子情報通信学会の論文
- 1996-09-25
著者
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Tazoh Yasuo
Ntt System Electronics Laboratories
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MIYAZAWA Shintaro
NTT System Electronics Laboratories
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- Epitaxial Nature of New Insulating Material BaSnO_3 for YBa_2Cu_3O_x-SIS Junctions (Special Issue on Toward Digital and Analog Applications of Superconductors)
- Transmission Electron Microscope Observations of Interfaces in YBa_2Cu_3O_x/BaSnO_3/YBa_2Cu_3O_x trilayers